ace 6 4 2 8 b n - channe l enhancement mode field effect transistor ver 1. 2 1 d escription the ace 6428b uses advanced trench technology to provide excellent r ds(on) , low gate charge. this device is suitable for use as a high side switch in smps and general purpose applications. features ? v ds (v)= 3 0 v ? i d = 43 a (v gs = 10 v) ? r ds(on) 10 m ( v gs = 10 v) ? r ds(on) 1 4.5 m ( v gs = 4 .5v) ? 100% delta vsd tested ? 100% rg tested absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s 3 0 v gate - source voltage v gs s 20 v drain current (continuous) t a =25 o c i d 43 a t a = 100 o c 27 drain current (pulse) c i dm 8 0 drain current (continuous) t a =25 o c i d sm 11 a t a =70 o c 8 power dissipation b t a =25 o c p d 30 w t a = 100 o c 12 power dissipation a t a =25 o c p d sm 2 w t a = 7 0 o c 1.3 operating and storage temperature range t j , t stg - 55 to 150 o c thermal characteristics parameter symbol typ max units maximum junction - to - ambient a t Q 10s r ja 21 25 /w maximum junction - to - ambient a d steady - state 50 60 /w maximum junction - to - ca se steady - state r jc 3.5 4.2 /w
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 2 packaging type d fn 5 * 6 - 8 l - e p ordering i nformation ace 6 4 2 8 b xx + h electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250ua 3 0 v zero gate voltage drain current i dss v ds = 30 v, v gs =0v 1 ua gate leakage current i gss v gs = 20 v, v ds =0v 100 n a static drain - source on - resistance r ds(on) v gs = 10 v, i d = 2 0 a 5. 7 1 0 m v gs = 4 .5 v, i d = 2 0 a 7 . 9 1 4 . 5 gate threshold voltage v gs(th) v ds =v gs , i d s = 250 ua 1 . 2 1 . 9 2 . 5 v forward transconductance g fs v ds = 5 v, i d = 15 a 25 s diode forward voltage v sd i sd = 2 a, v gs =0v 0.7 1 1.0 v maximum body - diode continuous current i s 2 a switching total g ate charge q g v ds = 1 5 v, i d = 2 0 a v gs = 5 v 16 20.8 nc gate - source charge q gs 5 6.5 gate - drain charge q gd 3 3.9 turn - on delay time t d(on) v d s = 1 5 v, v g s = 10 v r g en = 6 , r l = 15 17 34 ns turn - on rise time t f 5 10 turn - off delay time t d(off) 50 100 turn - off fall time t f 10 20 p n : dfn 5 * 6 - 8l - e p pb - free halogen - free
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 3 dynamic input capacitance c iss v ds = 1 5 v, v gs =0v f= 1m hz 2470 pf output capacitance c oss 325 reverse transfer capacitance c rss 185 note: a. the value of r ja is measured with the device mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction - to - case thermal resistance, and is more useful in s etting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction - to - case thermal impedence whic h is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the devic e mounted on 1in2 fr - 4 board with 2oz. copper, in a still air environment with t a =25c typical performance characteristics
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 4 typical performance characteristics
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 5 typical performance characteristics
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 6 typical performance characteristics
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 7 packing information dfn 5*6 - 8 l - ep
ace 6 4 2 8 b n - channel enhancement mode field effect transistor ver 1.2 8 notes ace does not assume any responsibility for use as critical components in life support devices or sys tems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life suppo rt device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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